PECVD法低温沉积多晶硅薄膜的研究  

Preparation of Polycrystalline Silicon Thin Films at Low Temperature by PEVCD

作　　者：邱春文[1] 石旺舟[1] 黄羽中[1] 

机构地区：[1]汕头大学物理系,广东汕头515063

出　　处：《液晶与显示》2003年第3期201-204,共4页Chinese Journal of Liquid Crystals and Displays

基　　金：广东省科委资助项目(130 122084)

摘　　要：在玻璃衬底上采用常规的PECVD法在低温(≤400℃)条件下制得大颗粒(直径>100nm)、择优取向(220)明显的多晶硅薄膜。选用的反应气体为SiF4和H2混合气体。加入少量的SiH4后,沉积速率提高了近10倍。分析认为,在低温时促使多晶硅结构形成的反应基元应是SiFmHn(m+n≤3),而不可能是SiHn(n≤3)基团。PolySi films with large grains (>100nm in diameter) were fabricated at relatively high deposition rate(～0.92nm/s) and low temperatures(≤400℃ ) by conventional PECVD system.In addition, it was found the grains' preferential orientation (220) is obvious. The films is obtained using SiF4 and H2 mixture as reaction gas source.When a little amount of SiH4 was added, the deposition rate was increased to almost 10 times. On the experiments we confirm that not the SiHn(n ≤3)but the SiFm Hn(m+n≤3) has contribution to polySi films growing at low temperatures.

关 键 词：PECVD法 多晶硅薄膜 低温沉积 太阳能电池 等离子体增强化学气相沉积法 

分 类 号：O484.1[理学—固体物理] TM914.4[理学—物理]