CVD金刚石膜的结构分析  被引量:18

Microscopic structure studies on the diamond films fabricated by chemical vapor deposition method

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作  者:刘存业[1] 刘畅 

机构地区:[1]西南师范大学物理学系,重庆400715 [2]拉特格斯大学物理与天文学系,美国新泽西08854

出  处:《物理学报》2003年第6期1479-1483,共5页Acta Physica Sinica

摘  要:利用x射线广角衍射和低角掠入射散射谱、正电子湮没谱、定性分析软件和Positronfit程序 ,研究了生长在Si( 10 0 )基底上的金刚石膜微结构 .研究发现 ,在样品邻近基底区域为纳米多晶结构 ,具有弱的 [111]织构 ;在邻近表面区域为微米多晶结构 ,具有强的 [2 2 0 ]织构 .金刚石膜样品有空位、空位团和空洞 3种缺陷 ,其中主要缺陷是大约The microscopic structures of the diamond films generated on Si (100) substrates by chemical vapor deposition have been studied by x-ray wide angle diffraction spectroscopy, grazing incidence x-ray scattering spectra, positrons annihilation lifetime spectroscopy, and qualitative software and Positronfit program. The diffraction x-ray spectra show a structure difference between the near substrate part (NSP) and near free-surface part (NFP) of the diamond film specimens, which reflect the weak [111] texture in NSP and the strong[220] texture in NFP. The positron annihilation lifetime spectroscopy of the specimens and the analyzing data indicate that the majority of positrons annihilate around 200 ps and 400 ps. The vacancies, vacancy clusters, and voids were found in the film specimens, depending on the processes in which the chemical vapor deposition is generated.

关 键 词:CVD 金刚石膜 结构分析 化学气相沉积 正电子湮没谱 x射线广角衍射 低角掠入射散 微结构 缺陷 

分 类 号:TN304.055[电子电信—物理电子学]

 

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