InGaAsP量子阱混合技术理论及模拟研究  

Study of Theory and Simulation on Semiconductor InGaAsP Quantum Wells Intermixing Technique

作　　者：岳优兰[1] 

机构地区：[1]焦作大学基础部,焦作454001

出　　处：《量子电子学报》2003年第3期350-357,共8页Chinese Journal of Quantum Electronics

摘　　要：本文以晶格中原子的扩散理论为基础,分析了四元系InGaAsP半导体材料中III、V族原子的扩散规律,建立了量子阱和超晶格结构中量子阱混合(QWI)的理论模型,模拟计算了半导体材料中组分浓度与扩散长度的关系,以及应变与扩散长度的关系,计算分析了应变对量子阱带隙、带结构和量子跃迁的影响,获得了一些有价值的结论,为量子阱混合试验和量子阱及超晶格集成器件的开发和研究提供了重要的理论基础。This paper, based on diffusion theory of crystal-lattice atoms , analyzes the diffusion laws of III & V family atoms in the InGaAsP semiconductor material . The theory model of quantum well intermixing (QWI) in quantum wells and super-lattice are established. The relations of component material and strain with diffusion length are computed by simulation , and the strained effects to quantum wells band-gaps, band-edge structures and quantum jump are computed and analyzed. Some valuable results are obtained which supply the principal theoretical basis for researching and developing quantum wells and super lattice devices.

关 键 词：半导体 量子阱 超晶格 量子阱混合 理论及数值计算 INGAASP 铟钙砷磷 

分 类 号：TN304.2[电子电信—物理电子学] O472[理学—半导体物理]