源气体流量比对F-DLC薄膜结构的影响  

Influence of Source Gas Flow Ratios on the Structural of F-DLC Films

作　　者：江美福[1] 宁兆元[1] 

机构地区：[1]苏州大学物理科学与技术学院,江苏苏州215006

出　　处：《材料科学与工程学报》2003年第4期539-541,共3页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目 (1 0 1 750 4 8)

摘　　要：以高纯石墨作靶、CHF3/Ar作源气体采用反应磁控溅射法制备出了氟化类金刚石 (F -DLC)薄膜。拉曼光谱表明 ,CHF3相对流量的增加会引起薄膜的D峰与G峰强度之比I(D) /I(G)减小 ,晶粒增大 ,芳香环结构比例下降。红外吸收光谱分析证实了这些推论 ,指出这是由于薄膜中氟含量上升的结果。The F DLC films were prepared by reactive magnetron sputtering with trifluromethane(CHF 3) and Ar as source gases and pure graphite as a target. The intensity ratio I(D)/I(G) of Raman bands of disordered graphite(D band) and graphite(G band) of F DLC films decreases with the increasing of source gas flow ratios CHF 3/Ar which is indicative of an decrease of the fraction of aromatic ring. The infrared absorption spectrum proves that and reveals that these are just due to an increase in the content of fluorine atoms in the films.

关 键 词：源气体 流量比 F-DLC薄膜 影响 反应磁控溅射法 氟化类金刚石薄膜 拉曼光谱 

分 类 号：TB332[一般工业技术—材料科学与工程]