浮栅ROM器件辐射效应机理分析  

Mechanism of radiation effects in floating gate ROMs

作　　者：贺朝会[1] 耿斌[1] 杨海亮[1] 陈晓华[1] 李国政[1] 王燕萍[1] 

机构地区：[1]西北核技术研究所,西安710613

出　　处：《物理学报》2003年第9期2235-2238,共4页Acta Physica Sinica

摘　　要：分析了浮栅ROM器件的辐射效应机理 ,合理地解释了实验中观察到的现象 .指出辐射产生的电子空穴对在器件中形成的氧化物陷阱电荷和界面陷阱电荷是导致存储单元及其外围电路出现错误的原因 .浮栅ROM器件的中子、质子和6 0Mechanism of irradiation effects is analyzed for floating gate read only memories (ROMs). Phenomena in experiments are reasonably explained. It is proposed that failures in devices result from oxide trapped charge and interface trapped charge generated by radiation in memory cells and peripheral circuitry. The neutron, proton and Co-60 gamma irradiation effects in FLASH ROM and EEPROM are total dose effects.

关 键 词：浮栅ROM器件 辐射效应 氧化物陷阱电荷 界面陷阱电荷 中子 质子 总剂量效应 只读存储器 ^60Coγ 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]