CHF_3/C_6H_6等离子体中的基团分析  

Analysis of radicals in CHF_3/C_6H_6 plasma

作　　者：程珊华[1] 宁兆元[1] 李戈扬[2] 叶超[1] 杜伟[1] 辛煜[1] 

机构地区：[1]苏州大学物理系,苏州215006 [2]上海交通大学金属基复合材料国家重点实验室,上海200030

出　　处：《功能材料与器件学报》2003年第3期240-246,共7页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(批准号:10175048);上海交通大学金属基复合材料国家重点实验室开放课题资助

摘　　要：在一个微波电子回旋共振等离子体化学气相沉积系统中,测量了CHF3、C6H6及其混合气体放电的质谱和发射光谱图,分析了等离子体中主要基团的分布及其产生的途径,研究了放电功率和流量对主要基团密度的影响,以及它们与氟化非晶碳薄膜沉积速率和键结构之间的关联。结果表明,提高微波功率会增加CHx、CFx等成膜基团的密度,有利于加大沉积速率;而增加CHF3的进气量则会加大F原子基团的密度,这是由于它控制了薄膜的氟化程度。The radicals of CHF3,C6H6 and CHF3/C6H6 plasmas were measured by a quadruple mass spectrometer and an optical emission spectrometer in an electron cyclotron resonance plasma chemical vapor deposition system. The effects of microwave power and gas flow rate on the concentrations of these radicals were also analyzed. The results show that the increasing of microwave power leads to increase the concentration of C2H4, CF2, HF and H2 radicals, and to increase the deposition rate of fluorinated amorphous carbon films, and C/F in the films is controlled by F radicals.

关 键 词：电子回旋共振等离子体 氟化非晶碳薄膜 四极质谱 发射光谱 化学气相沉积 薄膜 微波 CHF3 C6H6 基团 

分 类 号：O484[理学—固体物理]