CoSnS_2薄膜的制备及性能研究  

Study on the preparation and their properties of CoSnS_2 thin films

作　　者：杜金会[1] 于振瑞[1] 王如[2] 张加友[1] 王旭艳[1] 李正群[1] 

机构地区：[1]军事交通学院基础部,天津300161 [2]河北工业大学材料学院,天津300130

出　　处：《功能材料与器件学报》2003年第3期247-252,共6页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(批号:50172061)

摘　　要：采用两种方法制备了CoSnS2薄膜。在两步电沉积法中,先沉积SnS薄膜,再在其上制备CoS沉积薄膜,最后进行退火处理形成厚度约为1250nm的CoSnS2薄膜。在三元共沉积法中,加入EDTA(乙二胺四乙酸二钠)配合剂来调整Sn、Co、S的沉积电势以实现这三种元素的共沉积,从而一步形成厚约620nm的CoSnS2薄膜。探讨了薄膜的制备机理和制备条件对薄膜结构特性和光学特性的影响。得到的薄膜为多晶γ-Co6S5(立方晶系)和SnS(斜方晶系)结构,其直接光学带隙和间接光学带隙分别在1.05～1.25eV和0.11～0.71eV之间可调。CoSnS2 thin films were prepared by two methods. In the so- called two- step electrode- position method, SnS thin film was first electrodeposited, and then CoS thin film was prepared on it, at last, thermal annealing of this double layer specimen was performed in order to obtain CoSnS2 thin film of 1250nm. In the so- called three- element co- electrodeposition method, complexing agent of EDTA was added in order to adjust the electrodeposition potential of Co, Sn and S, so that they could co- electrodeposit and form CoSnS2 thin film of 620nm. The mechanism of the two methods was explored, and the influence of preparation conditions on the structural and optical properties of the films was studied. All the as- deposited films are of polycrystalline γ - Co6S5 with cubic structure and SnS with orthor- hombic structure. The direct optical band gap of 1.05～ 1.25 eV and the indirect optical band gap of 0.11～ 0.71 eV are observed, which can be modified by the preparation parameters.

关 键 词：CoSnS2薄膜 两步电沉积法 三元共沉积法 制备 结构特性 光学特性 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055