新型硅基双异质外延SOI材料Si/γ-Al_2O_3/Si制备  

Fabrication of novel silicon- based double heteroepitaxial SOI material of Si/γ - Al_2O_3/Si

作　　者：王启元[1] 谭利文[1] 王俊[1] 郁元桓[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《功能材料与器件学报》2003年第3期300-304,共5页Journal of Functional Materials and Devices

基　　金：国家重点基础研究规划项目(973)"系统芯片中新器件新工艺的基础研究"TG2000036506资助

摘　　要：异质外延法是目前制备新型SOI材料的技术途径之一。采用低压化学气相沉积技术(LPCVD)在硅衬底上先外延γ-Al2O3绝缘单晶薄膜,制备出硅衬底上外延氧化物外延结构γ-Al2O3/Si(EOS),然后采用类似SOS薄膜生长的常压CVD(APCVD)方法在EOS上外延硅单晶薄膜,形成新型硅基双异质SOI材料Si/γ-Al2O3/Si。利用反射高能电子衍射(RHEED)、X射线衍射(XRD)、俄歇电子能谱(AES)及MOS电学测量等技术表征分析了Si(100)/γ-Al2O3(100)/Si(100)SOI异质结构的晶体结构、组分和电学性能。测试结果表明,已成功实现了高质量的新型双异质外延SOI结构材料Si(100)/γ-Al2O3(100)/Si(100),γ-Al2O3与Si外延薄膜均为单晶,γ-Al2O3薄膜具有良好绝缘性能,SOI结构界面清晰陡峭,该SOI材料可应用于CMOS电路的研制。Hetero- epitaxy by chemical vapor deposition (CVD) is an alternative for silicon on insulator (SOI) material fabrication. The fabrication of Si- based double hetero- epitaxial SOI materials Si/γ - Al2O3/Si was reported. First, single crystalline γ - Al2O3 (100) insulator films were grown epitaxially on Si(100) by LPCVD, and then Si(100) epitaxial films were grown on γ - Al2O3 (100)/ Si(100) epi- substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si/γ - Al2O3 (100)/ Si(100) SOI materials were characterized in detail by RHEED, XRD, AES and MIS electric measurement techniques. The results demonstrate that the device- quality novel SOI materials Si/ γ - Al2O3 (100)/ Si(100) are fabricated successfully. Both γ - Al2O3 and Si films are single crystalline. γ - Al2O3 film exhibits a good insulating property. Two hetero interfaces of SOI structure are basically abrupt. The novel double heteroepitaxial SOI materials can be applied for fabrication of CMOS device and circuits.

关 键 词：Si/γ-Al2O3/Si SOI材料 异质外延法 LPCVD APCVD 晶体生长 EOS 

分 类 号：TN304.12[电子电信—物理电子学] O782[理学—晶体学]