垂直沟道器件的研究与进展  

Research and development of vertical channel MOSFETs

作　　者：刘金华[1] 黄如[1] 张兴[1] 周发龙[1] 

机构地区：[1]北京大学微电子学系,北京100871

出　　处：《功能材料与器件学报》2003年第3期362-368,共7页Journal of Functional Materials and Devices

摘　　要：介绍了垂直沟道器件的常见结构和工艺,分析了垂直沟道器件的最新进展以及垂直沟道器件制作工艺中的最新技术,详细讨论了垂直沟道器件的性能,并分析了垂直沟道器件的优点以及存在的问题。Typical configuration and correlative process of vertical channel MOSFETs are briefly introduced. The latest development as well as the novel process technology is presented also. Characteristics of the vertical channel MOSFETs are discussed in detail. Both the advantages and the disadvantages of the device are pointed out. The future developments are forecasted as well.

关 键 词：垂直沟道器件 硅台刻蚀 外延生长 MOSFET 研究进展 CMOS器件 

分 类 号：TN43[电子电信—微电子学与固体电子学]