微电子工艺技术可靠性  

Microelectronic Process Technology Reliability

作　　者：章晓文[1] 

机构地区：[1]信息产业部电子第五研究所分析中心

出　　处：《电子质量》2003年第9期U011-U013,共3页Electronics Quality

摘　　要：对工艺过程进行评估的目的在于找出存在可靠性缺陷的地方,它是针对技术磨损的机理,通过对专门设计的测试结构进行封装级或圆片级可靠性测试,获取可靠性模型参数和可靠性信息。超大规模集成电路主要的三个的失效机理分别是热载流子注入效应、金属化电迁移效应和氧化层的TDDB击穿,本文对这三种失效机理分别进行了介绍,对各自对应的可靠性模型进行了说明,列举了热载流子汪入效应的寿命评价实例,说明了可靠性评价的重要性,给出了可靠性评价在工艺中的应用流程图。The goal to evaluating process is to find the defect of reliability, reliability parameters and datum can be acquired through wafer level and packaged level reliability experiments in specific test structures, according to failure mechanisms. The main failure mechanisms of VLSI are Metal Film EM, hot carrier injection and TDDB breakdown. These failure mechanisms are to be introduced in the paper,and reliability models are to be discussed.A sample is given about hot carrier injection life evaluation, it illuminate the important of reliability assessment, a flow chart of relaibility evluation in process is present.

关 键 词：微电子工艺 可靠性 超大规模集成电路 失效机理 热载流子注入效应 金属化电迁移效应 氧化层 

分 类 号：TN405[电子电信—微电子学与固体电子学]