热处理对MIM薄膜二极管中Ta_2O_5膜表面形貌的影响  

Effect of Heat-treatment on Surface Appearance of Ta_2O_5 Film in MIM Thin Film Diode

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作  者:张浩康[1] 钟锐[1] 许晓伟[1] 

机构地区:[1]东南大学电子工程系,南京210096

出  处:《光电子技术》2003年第3期194-198,共5页Optoelectronic Technology

摘  要:采用了一种较为新颖的真空热处理和大气气氛下热处理相结合的热处理工艺 ,并应用到两种以反应溅射工艺为基础制备出的多层 Ta2 O5膜样品的后处理上。 AFM结果显示 ,经过真空和大气热处理之后 ,两种 Ta2 O5膜样品的表面平整度均得到了较大改善 ,反映出膜内部结构的致密性也得到了较大提高 ,这将一定程度改善以该膜为绝缘层的 MIM- TFD的漏电流和耐击穿电压等电性能。此外 ,其中的大气热处理工艺所需要的设备和操作程序非常简单 ,成本较低 ,这也为 MIM-A novel technology combined with heat treatment under vacuum and atmosphere circumstances respectively was introduced, which was applied in the post treatment on two kinds of multi layer Ta 2O 5 films fabricated based on reaction sputtering technology. AFM results showed that, after vacuum and atmosphere heat treatment, the surface flatness of both multi layer Ta 2O 5 films got improved greatly, which reflected that the compactness of the inner film structure was improved to some extent as well as the electrical performance such as leakage current and broken through voltage of MIM TFD taken the film as insulator layer. Moreover, the required instrument and operating progress of atmosphere heat treatment technology were very simple and the cost was very low, which provided a new path for the post treatment technology of MIM TFD.

关 键 词:热处理 MIM薄膜二极管 Ta2O5膜 表面形貌 反应溅射 电子束蒸发 原子力显微镜 

分 类 号:TN311.5[电子电信—物理电子学]

 

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