声表面波器件用〈110〉取向ZnO薄膜的MOCVD生长  

Growth of <110> Oriented ZnO Films Used for SAWF by MOCVD

作　　者：赵佰军[1] 杜国同[1] 王金忠[1] 杨洪军[1] 张源涛[1] 杨小天[1] 马艳[1] 刘博阳[1] 杨天鹏[1] 刘大力[1] 

机构地区：[1]吉林大学电子科学与工程学院,长春130023

出　　处：《高等学校化学学报》2003年第10期1750-1752,共3页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金 (批准号 :60 1770 0 7和 60 1760 2 6);863项目 (批准号 :2 0 0 1AA3 1113 0 )资助

摘　　要：ZnO films with <110> orientation were grown on R-Al 2O 3 substrates by LP-MOCVD, and the growth temperature was optimized. The quality of crystal, surface morphology and optical characteristic of the samples were investigated by XRD, AFM and PL method. The experimental results show that the FWHM of the optimized sample is only 0.50°. Compared with that of the sample grown on C-Al 2O 3 material under the same conditions, the surface morphology of the first sample is denser and smooth, while the PL spectra indicate that the exciton emitting intensity of <110> oriented ZnO film in the ultraviolet range is lower. However, the deep-level emission related to the intrinsic defects disappears in the spectrum. All above indicate that the <110> oriented ZnO film is more suitable for fabrication of the film SAWF with a low loss and a high frequency than for fabrication of the emitting device in ultraviolet range.ZnO films with <110> orientation were grown on R-Al 2O 3 substrates by LP-MOCVD, and the growth temperature was optimized. The quality of crystal, surface morphology and optical characteristic of the samples were investigated by XRD, AFM and PL method. The experimental results show that the FWHM of the optimized sample is only 0.50°. Compared with that of the sample grown on C-Al 2O 3 material under the same conditions, the surface morphology of the first sample is denser and smooth, while the PL spectra indicate that the exciton emitting intensity of <110> oriented ZnO film in the ultraviolet range is lower. However, the deep-level emission related to the intrinsic defects disappears in the spectrum. All above indicate that the <110> oriented ZnO film is more suitable for fabrication of the film SAWF with a low loss and a high frequency than for fabrication of the emitting device in ultraviolet range.

关 键 词：声表面波器件 ZnO 薄膜 MOCVD 蓝宝石 XRD AFM PL 半导体材料 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055