GaN的宽带黄光发射研究  

Studies of broadband yellow luminescence of GaN

作　　者：赖天树[1] 范海华[1] 柳振东[1] 林位株[1] 

机构地区：[1]中山大学光电材料与技术国家重点实验室,物理系,广州510275

出　　处：《物理学报》2003年第10期2638-2641,共4页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :6 98880 0 56 0 1780 2 0 );广东省自然科学基金 (批准号 :970 14 0 112 0 4 )资助的课题~~

摘　　要：使用非线性最优化技术 ,用多个高斯函数叠加最优化拟合非掺杂GaN薄膜的宽的黄色发光带 .发现宽带黄色发光带可分解为三个高斯型谱的叠加 .表明宽的黄色发光带是由三个独立辐射跃迁发射叠加而成 .使用一种新的吸收归一化光致发光激发谱直接测量出此三个独立发射的初始态能级 ,发现三个独立发射具有相同的初始态和不同的末态 ,并对初。The broadband yellow luminescence(BYL) of undoped GaN film is fitted optimally by the linear superposition of multiple Gaussian functions by using nonlinear optimization technique. It is found that the BYL may be divided into the three Gauss-type spectra. It shows for the first time that the BYL originates from the combination of three independent radiative transitions. The energy levels of the initial states of the three independent transitions are measured directly in experiment by means of a novel absorption-normalized photoluminescent excitation spectroscopy. It is found that the three independent transitions have the same initial state but different final states. The origins of the initial and final states are assigned reasonably.

关 键 词：GAN 宽带黄光发射 氮化镓薄膜 吸收归一化光致发光激发谱 半导体材料 光学性质 

分 类 号：O472.3[理学—半导体物理] TN304.23[理学—物理]