Al/SRO/Si结构中横向电压作用下的电荷俘获效应  

Carge-Trapping Effect of Al/SRO/Si Devices Under Lateral Electrical Stress

作　　者：于振瑞[1] 杜金会[2] 张加友[1] 李长安[2] Aceves M 

机构地区：[1]南开大学光电子研究所,天津300071 [2]军事交通学院基础部,天津300161 [3]Department of Electronics

出　　处：《Journal of Semiconductors》2003年第11期1180-1184,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号 :5 0 172 0 61);墨西哥Conacyt资助项目~~

摘　　要：利用 Al/ SRO/ Si MOS,对富硅二氧化硅 (SRO)材料在横向电压作用下的电荷俘获效应进行了研究 .用L PCVD法在 n型 Si衬底上沉积 SRO材料 ,通过 C- V测量研究其电荷俘获性质 .发现对于 n型 Si衬底 ,在横向电压作用下 ,SRO层能够俘获正电荷 ,电荷俘获效应与 SRO层的性质有关 .基于电位在器件内部的分布及诱导 pn结的形成 。The charge trapping effect of Al/SRO/Si MOS devices under lateral electrical stress is investigated.SRO layer is deposited on n type Si substrate by LPCVD technique using SiH 4 and N 2O gas mixture as deposition reactant with gas flow ratio of R =/=30.High frequency C V measurements are performed to study the charge trapping effect.It is found that,for n type Si substrate,positive charges can be trapped in the SRO layer with charge density of 3 0×10 11 cm -2 .A simple model based on the potential distribution and the formation of induced pn junction under the stressing electrodes is proposed to interpret the experimental results.

关 键 词：富硅氧化硅 电荷俘获效应 C-V测试 诱导pn结 

分 类 号：TN304.05[电子电信—物理电子学]