额外HCl和氮化对HVPE GaN生长的影响  

Effect of Additional HCl and Substrate Nitridation on GaN Films Grown by HVPE

作　　者：修向前[1] 张荣[1] 李杰[1] 卢佃清[1] 毕朝霞[1] 叶宇达[1] 俞慧强[1] 郑有炓[1] 

机构地区：[1]南京大学物理系,南京210093

出　　处：《Journal of Semiconductors》2003年第11期1171-1175,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划 (No.G2 0 0 0 0 683 0 5 );国家高技术研究发展计划 (No.2 0 0 1AA3 11110);国家自然科学基金(批准号:699760 14;6980 60 0 6和699870 0 1)资助项目~~

摘　　要：在氢化物气相外延 (HVPE)生长 Ga N过程中 ,发现了一种在成核阶段向生长区添加额外 HCl来改善 Ga N外延薄膜质量的方法 ,并且讨论了额外 HCl和氮化对 Ga N形貌和质量的影响 .两种方法都可以大幅度地改善 Ga N的晶体质量和性质 ,但机理不同 .氮化是通过在衬底表面形成 Al N小岛 ,促进了衬底表面的成核和薄膜的融合 ;而添加额外A new way to improve the quality and reproducibility of GaN film in hydride vapor phase epitaxy (HVPE) system is reported by introducing the additional HCl to the growth surface in the initial step of nucleation.In addition,substrate nitridation is often used in the growth technique of GaN.The effect of additional HCl and nitridation on the optical properties,structure and surface morphology of HVPE GaN films is studied.The results show that the quality of HVPE GaN films is improved in deed.But probably they have different formation mechanism on the growth of GaN films.

关 键 词：氢化物气相外延(HVPE) GAN 氮化 额外HCl 

分 类 号：TN304.2[电子电信—物理电子学]