多层介质膜MIM薄膜二极管的I-V特性研究  

I-V Character of MIM Thin Film Diode with Multilayer Insulator Film

作　　者：钟锐[1] 黄蕙芬[1] 张浩康[1] 王震[1] 马俊[1] 

机构地区：[1]东南大学电子工程系,南京210096

出　　处：《固体电子学研究与进展》2003年第3期334-338,共5页Research & Progress of SSE

摘　　要：制备了一种用于有源矩阵液晶显示的具有对称结构、较好 I-V特性对称性和较高电流通断比的 MIM薄膜二极管。采用了基于反应溅射的多层膜工艺制备其 Ta2 O5绝缘层。采用原子力显微镜 (AFM)对 Ta2 O5膜进行了表面分析 ,并对 MIM薄膜二极管的 I-V特性进行了测试。AFM分析结果表明 ,电子束蒸发 /反应溅射 /电子束蒸发法工艺制备的绝缘膜表面平整 ,膜层较致密 ;I-V特性测试结果显示 ,MIM-TFD的电流通断比约为 1 0 5,I-V特性曲线的非线性系数为 1 0 ,左右阈值电压分别为 6.3 V和 5 .8V,具有良好的对称性。该MIM TFD with symmetrical structure was investigated which had well symmetri cal I V characteristic and high on/off current ratio. The Ta 2O 5 in sulator layer was fabricated with multi layer film technology based on reaction sputtering. Results of surface analysis of Ta 2O 5 lyaer by AFM showed tha t, insulator layer fabricated with electron beam evaporation/reaction sputtering /electron beam evaporation technology has a flat surface and a serried structure . Testing results of I V characteristic of MIM TFD showed that, the on/o ff current ratio was about 10 5, the nonlinear coefficient of I V curv e was 10 and the left/right threshold voltage was 6.3 V/5.8 V which was furthemo re symmetrical. MIM TFD with these characteristics would satisfy the requiremen t of AM LCD.

关 键 词：液晶显示 多层介质膜 MIM薄膜二极管 I-V特性 反应溅射 电子束蒸发 

分 类 号：TN873.93[电子电信—信息与通信工程]