低气压高密度等离子体刻蚀轮廓的数值研究  

Numerical Studies on Etching Profiles in Low-pressure High-density Plasma

作　　者：杨银堂[1] 王平[1] 柴常春[1] 付俊兴[1] 徐新艳[1] 杨桂杰[1] 刘宁[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《固体电子学研究与进展》2003年第3期359-365,共7页Research & Progress of SSE

基　　金：国防科技预研基金 (99J8.3 .2 DZ0 13 7)资助项目

摘　　要：低气压、高密度等离子体刻蚀轮廓的数值研究对于研究高密度等离子体刻蚀工艺具有重要意义。文中提出了一个二维低气压、高密度等离子体刻蚀轮廓的理论模型 ,并利用“线”算法进行了数值模拟。与以往不同之处在于 ,模型中引入了掩模对入射粒子流的遮蔽效应和中性粒子在不同刻蚀表面的粘附系数的影响 ,使得模拟结果的准确性大大提高。论文最终还给出了要获得各向异性刻蚀的 e VS/k Ti 和 Γn0 /Γi0Modeling low pre s sure, high density plasma etching is hig hly significant for high density plasma etching processing research. A two dimen sional theory model of low pressure, hig h density plasma etching is presented. T he model has been numerically simulated by using 'string' algorithm. The feature is that the influence of shadowing effe cts of the mask edge for the incident pa rticle flux and the sticking coefficient of the neutral flux at different etchin g surface is introduced, which improves accuracy of the simulating results. At l ast, the value range of eV S/ kT i an d Γ n0 / Γ i0 for low pressure, hi gh density plasma anisotropy etching has also been obtained.

关 键 词：高密度等离子体刻蚀工艺 低气压 刻蚀轮廓 数值模拟 离子流通量 物理模型 刻蚀速率 

分 类 号：TN305.7[电子电信—物理电子学]