SiGe HBT的速度优化设计  

Design Optimization of High-Speed SiGe Heterojunction Bipolar Transistors

作　　者：刘伦才[1] 王若虚[1] 张正璠[2] 李儒章[2] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]模拟集成电路国家重点实验室,重庆400060

出　　处：《微电子学》2003年第6期473-476,共4页Microelectronics

摘　　要：　从理论分析角度介绍了优化SiGe异质结晶体管速度的方法。结合双极晶体管的工艺限制,介绍了SiGeHBT的基本原理,讨论了SiGeHBT的发射区/基区/集电区设计。最后,以一个100GHzfmax和fT的HBT为例,对电路制作工艺参数进行了讨论。Technologies for optimizing the speed of SiGe heterojunction bipolar transistors (HBT) are presented in the paper. Along with the process limitation of BJT technology, the operational principle of the SiGe HBT is described. And the design of emitter, base and collector of the SiGe HBT is dealt with in particular. Finally, process parameters of two HBTs, for which an f_(max) or f_T of 100 GHz have been achieved, are discussed.

关 键 词：SIGE 异质结晶体管 双极晶体管 发射区 基区 集电区 

分 类 号：TN325.3[电子电信—物理电子学]