用SPV法对影响硅片少于寿命因素的研究  

A study on influential factors affecting lifetime of minor carriers in sili- con monocrystalline using SPV method

作　　者：卢立延 曹孜 杜娟 

机构地区：[1]有研半导体材料股份有限公司

出　　处：《世界有色金属》2003年第12期30-32,共3页World Nonferrous Metals

摘　　要：随着IC工业的发展,对硅材料的质量提出了越来越高的要求。硅单晶中的非平衡少数载流子寿命(少子寿命)是一个被关注的表征材料性能的重要物理参数。本文通过表面光电压法(SPV)研究提出单晶工艺、退火前硅片的洁净程度及退火炉的洁净程度是影响寿命及内部金属沾污的三个重要因素。With the IC industry development, the quality requirements, for silicon materials are more and more stringent. The lifetime of non equillibrium minor carriers in silicon monocrystalline is an important physical parameter of characteristic material properties. In this paper, three important influential factors are presented, i. e., monocrystalline process, cleanliness of silicon wafers before annealing, and eleanliness of annealer, affecting the lifetime and bulk metal contamination by way of the study with SPV (Surface Photoelectric Volage) method.

关 键 词：硅片 单晶硅 少子寿命 表面光电压法 SPV 

分 类 号：TN304.12[电子电信—物理电子学]