场致发射硅尖阵列的研制  

Preparation of Field-Emission Silicon Tip Arrays

作　　者：吴海霞[1] 仲顺安[1] 李文雄[1] 邵雷[1] 鲁雪峰[1] 

机构地区：[1]北京理工大学信息科学技术学院电子工程系,北京100081

出　　处：《北京理工大学学报》2003年第5期638-640,共3页Transactions of Beijing Institute of Technology

基　　金：国家部委预研项目(YJ961031)

摘　　要：研究真空微电子器件场致发射硅尖阵列的制作工艺.利用HNA湿法腐蚀工艺制作场致发射硅尖阵列,比较带胶腐蚀与不带胶腐蚀的不同.采用氧化削尖技术对硅尖进行锐化处理.制作了50×60硅尖阵列,同时给出了硅尖阵列的I-V特性.利用HNA湿法腐蚀制备的硅尖结构与理论分析一致,锐化处理改善了硅尖阴极阵列的场致发射特性.Studies the process of preparation of fieldemission silicon tip arrays for use in vacuum microelectronic devices. By way of HNA wet chemical etching, fieldemission silicon tip arrays were prepared and the difference between etching with and without glue made out. The silicon tips were sharpened by means of oxidation sharpening. A 50×60 array of silicon tip was prepared and SEM images of silicon tips were made. Current vs. voltage characteristics of the silicon tip arrays were also observed. Structure of silicon tips prepared with HNA wet chemical etching was in agreement with that from theoretical analysis. Oxidation sharpening did improve the fieldemission characteristics of silicon tip arrays.

关 键 词：真空微电子器件 湿法腐蚀 场致发射阴极阵列 硅尖 

分 类 号：TN304.055[电子电信—物理电子学]