大应变In_(0.3)Ga_(0.7)As/GaAs量子阱激光器的生长和研究  

Growth and Study of High Strain In_0.3Ga_0.7As/GaAs Quantum Well Laser Diode Device

作　　者：潘教青[1] 黄柏标[1] 张晓阳[1] 任忠祥 秦晓燕[1] 朱宝富[1] 李先林[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]山东华光光电子有限公司,济南250010

出　　处：《量子电子学报》2003年第6期707-710,共4页Chinese Journal of Quantum Electronics

摘　　要：金属有机物化学气相沉积(MOCVD)方法生长应变InGaAs/GaAs量子阱,应变缓冲层结合生长中断改善量子阱的PL谱特性.用该量子阱制备的激光器有很低的阈值电流密度(43 A/cm^2)和较高的斜率效率(0.34W/A,per facet)。Strain buffer layer and growth interruption were applied in the QW growth by mentalorganic chemical vapor deposition (MOCVD) to improve QW photoluminescence performance. The laser diodes using the QW have very low threshold current densities (43 A/cm2) and high slop efficience (0.34 W/A, per facet).

关 键 词：金属有机物化学气相沉积 生长中断 应变缓冲层 应变量子阱激光器 INGAAS/GAAS量子阱 

分 类 号：TN248.4[电子电信—物理电子学]