国产中高压抗辐照功率MOSFET单粒子效应  

Single event effects for domestic radiation-hardened power MOSFET devices

作　　者：高博[1] 王立新[1] 刘刚[1] 罗家俊[1] 韩郑生[1] 王路璐[1] 邓海涛[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《太赫兹科学与电子信息学报》2016年第1期143-147,共5页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家自然科学基金资助项目(61204110);中国科学院重点实验室基金资助项目(CXJJ-15S079)

摘　　要：功率金属-氧化物半导体场效应晶体管(MOSFET)空间使用时易遭受重离子轰击产生单粒子效应(单粒子烧毁和单粒子栅穿)。本文对国产新型中、高压(额定电压250 V,500 V)抗辐照功率MOSFET的单粒子辐射效应进行了研究,并采取了有针对性的加固措施,使器件的抗单粒子能力显著提升。结果表明:对250 V KW2型功率MOSFET器件进行Bi粒子辐照,在栅压等于0 V时,安全工作的漏极电压达到250 V;对500 V KW5型功率MOSFET器件进行Xe粒子辐照,在栅压等于0 V时,安全工作的漏极电压达到400 V,并且当栅压为-15 V时,安全工作的漏极电压也达到400 V,说明国产中、高压功率MOSFET器件有较好的抗单粒子能力。The single event effects of power Metal Oxide Semiconductor Field Effect Transistor(MOSFET) are easy to be induced by impacts of heavy ion when they are used in space environment, such as single event burnout and Single Event Gate Rupture(SEGR). The single event effects of domestic new type anti-irradiation power MOSFETs with medium or high voltage(rated voltages are 250 V and 500 V) are studied in this paper. Targeted reinforcement measures are taken and the ability of devices to resist single event effect is significantly improved. Experiment results indicate that the 250 V power MOSFET is irradiated by Bi particles, the drain voltage of safety work reaches 250 V when gate voltage is 0 V; the 500 V power MOSFET is irradiated by Xe particles, the drain voltage of safety work reaches 400 V when gate voltage is 0 V, and the drain voltage of safety work can also reach 400 V when gate voltage is-15 V. The experiment results show that the domestic power MOSFET with medium or high voltage has a good ability to resist single event effect.

关 键 词：功率金属-氧化物半导体场效应晶体管 单粒子效应 抗辐射加固 

分 类 号：TN386[电子电信—物理电子学]