离子束辅助沉积铪薄膜晶粒的择优取向  

Preferred crystal orientation of Hf films prepared by ion beam assisted depostion

作　　者：江炳尧[1] 任琮欣[1] 郑志宏[1] 柳襄怀[1] 樊会明[2] 姚刘聪[2] 李玉涛[2] 苏小保[2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所离子束重点实验室,上海200050 [2]中国科学院电子学研究所,北京100080

出　　处：《中国有色金属学报》2003年第6期1414-1419,共6页The Chinese Journal of Nonferrous Metals

基　　金：国家重点基础研究发展规划基金资助项目 (G2 0 0 0 0 672 0 72 ) ;中国科学院电子学研究所基金资助项目 (3 10 90 7)

摘　　要：采用离子束辅助沉积方法 (IBAD)在Si(111)衬底上沉积了铪薄膜。实验发现 :在铪膜生长时 ,轰击铪膜的Ar+ 离子的能量、入射角度和束流密度对薄膜的晶粒取向有很大的影响。当Ar+ 离子的能量为 5 0 0eV、入射角为 75°、束流密度为 0 .9A/m2 时 ,铪膜为 (110 )择优取向。当束流密度大于 1.2A/m2 时 ,铪膜以 (0 0 2 )、(10 0 )混合晶向为主 ,而与Ar+ 离子的入射角度无关。讨论了铪膜晶粒取向的转变机制 ,认为铪膜晶粒的择优取向 ,不是单纯地取决于基于沟道效应的溅射机制 ,或取决于基于能量极小原理的表面能最小或表面应力最小的面生长较快的机制 ,而是影响薄膜生长的各种因素互相竞争、共同作用 ,在非平衡态条件下表面能极小化的结果。Hf films were synthesized by ion beam assisted deposition(IBAD). The influence of ion bombardment during deposition on the preferred orientation of films was studied. Hf film grains exhibit preferred (110) orientation when the growing film is bombarded by 500 eV Ar^+ions at an incident angle of 75° and a current density of 0.9 A/m^2. When the current density is beyond 1.2 A/m^2, the Hf films exhibit mixed (002) and (100) orientation and which is not concerned with the ion incident angle. The reason for the preferred orientation of Hf film was discussed. It is considered that the preferred orientation of Hf films does not simply depend on the channeling effects of ions, or the grain surface energy, but it is the result of mutual competition and actions of several factors, which influences the crystallographic orientation of thin films in the non-equilibrium growth conditions.

关 键 词：铪薄膜 晶粒 择优取向 离子束辅助沉积 IBAD 

分 类 号：TG174.444[金属学及工艺—金属表面处理]