GaAlAs/GaAs半导体功率放大激光器的研究  

Study on the GaAlAs/GaAs Laser with Semiconductor Power Amplification

作　　者：杨晓妍[1] 杨琏[1] 朱明方[2] 刘杰[2] 任大翠[1] 

机构地区：[1]长春理工大学,吉林长春130022 [2]吉林大学,吉林长春130022

出　　处：《激光与红外》2003年第6期428-429,共2页Laser & Infrared

摘　　要：研究一种GaAlAs/GaAs材料的高功率半导体功率放大激光器(LD-SLA)。器件为双异质结增异导引氧化物条形结构。采用直接耦合方式将半导体激光器(LD)与半导体功率放大器(SLA)集成一体,使单管芯输出光功率提高一个数量级。并在器件端面镀高反射膜和增透膜,使器件端面的反射率和透射率由不镀膜时的29%、71%提高到90%以上,进一步提高激光输出。保护器件端面、提高器件使用寿命。A novel high power LD-SLA of GaAlAs/GaAs maerial has been studied.Device is DHL structure of gain-guide and oxide-strripe.It uses direct coupling of the LD with the SLA.Output power has been amplified an order.High reflecting coatings and anti-reflective on the cavity surface of LD-SLA.The transmission coefficent and reflective coefficient have been changed respectively from 71% and 29%,in the case of without coatings,to above 90%.By this,the device cavity surface have been protected,the output power increased.

关 键 词：半导体功率放大激光器 GAALAS/GAAS 直接耦合 谐振腔 

分 类 号：TN248.4[电子电信—物理电子学]