薄膜SOI器件研究与展望  

A Study on Thin-Film SOI Devices and Their Prospective View

作　　者：周天舒[1] 黄庆安[1] 童勤义 

机构地区：[1]东南大学微电子中心,江苏南京210018

出　　处：《微电子学》1992年第3期39-43,67,共6页Microelectronics

摘　　要：本文详细地分析了薄膜SOI器件一系列有益的特性,如:较大的亚阈值陡度,扭曲(kink)效应的消除以及短沟道效应的削弱等。最后指出,薄膜SOI器件技术是今后设计制造新型亚微米器件及电路的一种有效的方法。A number of useful properties of thin-film SOI devices, such as Sharp subthreshold slopes, absence of kink effect and reduction of the short-channel effect etc. are analyzed in detail in this paper. It is concluded that thin-film SOI technology is an effective way to design and fabricate novel submicron devices and circuits in the future.

关 键 词：薄膜器件 SOI MOSFET 

分 类 号：TN304.055[电子电信—物理电子学]