Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology  

一种采用局域注氧技术制备的新型DSOI器件(英文)

作　　者：何平[1] 江波[1] 林曦[1] 刘理天[1] 田立林[1] 李志坚[1] 董业明[2] 陈猛[2] 王曦[2] 

机构地区：[1]清华大学微电子学研究所,北京100084 [2]中国科学院上海冶金研究所离子束实验室,上海200050

出　　处：《Journal of Semiconductors》2003年第6期592-597,共6页半导体学报（英文版）

基　　金：国家自然科学基金 (批准号 :5 9995 5 5 0 -1);国家重点基础研究专项经费 (编号 :G2 0 0 0 0 365 0 1)资助项目~~

摘　　要：To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices.Using this method,DSOI,SOI,and bulk MOSFETs are successfully integrated on a single chip.Test results show that the drain induced barrier lowering effect is suppressed.The breakdown voltage drain-to-source is greatly increased for DSOI devices due to the elimination of the floating-body effect.And the self-heating effect is also reduced and thus the reliability increased.At the same time,the advantage of SOI devices in speed is maintained.The technology makes it possible to integrate low voltage,low power,low speed SOI devices or high voltage,high power,high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.为了克服传统 SOI器件的浮体效应和自热效应 ,采用创新的工艺方法将低剂量局域 SIMOX工艺及传统的CMOS工艺结合 ,实现了 DSOI结构的器件 .测试结果表明 ,该器件消除了传统 SOI器件的浮体效应 ,同时自热效应得到很大的改善 ,提高了可靠性和稳定性 .而原先

关 键 词：SIMOX MOS devices silicon on insulator technology floating-body effect 

分 类 号：TN305[电子电信—物理电子学]