双层多晶硅FLOTOX EEPROM特性的模拟和验证  

Simulation and Verification of Characteristics for Two-PolySilicon FLOTOX EEPROM Cell

作　　者：黄飞鸿[1] 郑国祥[1] 吴瑞 

机构地区：[1]复旦大学材料科学系,上海200433 [2]先进半导体制造有限公司,上海200233

出　　处：《Journal of Semiconductors》2003年第6期637-642,共6页半导体学报（英文版）

摘　　要：介绍了 EEPROM的电学模型 ,模拟分析了阈值电压变化与写入时间、写入电压、隧道孔面积、浮栅面积的关系 .根据模拟结果 ,采用 0 .6μm CMOS工艺 ,对双层多晶硅 FL OTOX EEPROM进行了流片 ,PCM的测试结果验证了模拟结果在实际工艺中的可行性 .In order to evaluate the process parameters of two-polysilicon FLOTOX EEPROM,the electrical model of EEPROM is introduced.The relation between threshold voltage and writing time,programming voltage,tunnel area and floating area is simulated.Based on the simulating results and 0.6μm CMOS process technique,the two-polysilicon FLOTOX EEPROM is fabricated.Finally,the feasibility of simulating results is verified by PCM testing results.Therefore,the process evaluation of FLOTOX EEPROM will be the ground work for manufacturing high quality memory cell.

关 键 词：FLOTOX EEPROM 阈值电压 写入 隧道氧化层 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]