蓝宝石衬底的ECR等离子体清洗与氮化的RHEED研究  

Study of ECR-Plasma Cleaning and Nitridation of Sapphire Substrate by RHEED

作　　者：秦福文[1] 顾彪[1] 徐茵[1] 杨大智[2] 

机构地区：[1]大连理工大学三束材料表面改性国家重点实验室 [2]大连理工大学材料工程系,大连116024

出　　处：《Journal of Semiconductors》2003年第6期668-672,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 ( No.699760 0 8)~~

摘　　要：通过分析 RHEED(反射高能电子衍射 )图像研究了 ECR(电子回旋共振 )等离子体所产生的活性氢源和氮源对蓝宝石衬底的清洗与氮化作用 ,结果表明 :在 ECR氢等离子体中掺入少量的氮气可以明显提高蓝宝石衬底的清洗效果 ,从而获得平整而洁净的衬底表面 ;而采用 ECR氮等离子体对经过氢氮混合等离子体清洗 2 0 min后的蓝宝石衬底进行氮化 ,能观测到最清晰的氮化铝成核层的 RHEED条纹 ,且生长的 GaThe cleaning and nitridation effect of hydrogen and nitrogen ECR plasma for sapphire substrate are studied by analyzing RHEED image. The results indicate that we can markedly improve the cleaning effect of sapphire substrate by adding a small amount of nitrogen into ECR hydrogen plasma,thereby we can obtain smooth and clear substrate surface.And we adopt ECR nitrogen plasma to nitride sapphire substrate which was cleaned with ECR plasma of hydrogen added with nitrogen for 20min prior to the adoption,then we can observe clear RHEED stripes of AlN nucleation layer.Furthermore the crystal quality of GaN buffer layer is the best.

关 键 词：蓝宝石 清洗 氮化 RHEED GAN 

分 类 号：TN305[电子电信—物理电子学]