CF_4,CH_4制备氟化非晶碳薄膜工艺研究  

Study on fluorinated amorphous carbon thin films prepared by CF_4 and CH_4

作　　者：刘雄飞[1] 肖剑荣[1] 李幼真[1] 

机构地区：[1]中南大学物理科学与技术学院,湖南长沙410083

出　　处：《真空》2004年第1期22-25,共4页Vacuum

摘　　要：以CF4和CH4为源气体,用等离子体增强化学气相沉积(PECVD)方法制备了不同工艺条件下的氟化非晶碳(a-C∶F)薄膜。发现薄膜的沉积速率和射频功率几乎成正比关系,薄膜中氟的存在是导致薄膜具有紫外吸收特性的根本原因;用傅立叶变换红外光谱(FTIR)分析可知薄膜中有C-F基团的存在,使得薄膜的介电常数降低;合理控制沉积条件,可获得理想的电介质薄膜。a-C∶F thin films were deposited by using PECVD method, the source gases were CF_4 and CH_4, the experiments indicated that the deposition rate was almost in direct ratio with the RF power, the element F caused the ultraviolet ray absorbability. By using FTIR, we found that the C-F group decreased the dielectric constant of the film. Controlling the deposition condition in reason, we can get perfect medium thin films.

关 键 词：CF4 CH4 氟化非晶碳薄膜 等离子体增强化学气相沉积 PECVD 沉积速率 射频功率 介电常数 

分 类 号：TN304.055[电子电信—物理电子学]