分子束外延ZnSe/GaAs材料的拉曼散射研究  

Raman Scattering Studies of MBE-Grown ZnSe/GaAs

作　　者：史向华[1] 王兴军[2] 俞根才[2] 侯晓远[2] 

机构地区：[1]长沙电力学院物理系,长沙410077 [2]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《光学学报》2003年第5期619-621,共3页Acta Optica Sinica

摘　　要：用分子束外延 (MBE)技术 ,在GaAa( 10 0 )衬底上生长了厚度从 0 .0 45 μm到 1.4μm的ZnSe薄膜。通过室温拉曼光谱的测量对ZnSe薄膜纵光学声子 (Longitudinal opticalphonon)的谱形进行了分析。用拉曼散射的空间相关模型定量分析了一级拉曼散射的空间相关长度与晶体质量之间的关系 ,结果表明ZnSe外延层的晶体质量随着外延层厚度的减薄是渐渐退化的 ,这是由于界面失配位错引入外延层所致 ,理论分析与实验结果相吻合。ZnSe films with thickness from 0.045μm to 1.4μm were grown by MBE on (100) GaAs substrates and characterized by room temperature Raman scattering. The relationship between the coherence length L and the qualities of ZnSe films was analyzed from the line shapes of the first-order longitudinal-optical phonon Raman scattering quantitatively. The shift asymmetry of the LO phonon peak was investigated in detail. The results show the quality of ZnSe film is gradually degenerated with the decrease of the film thickness. This is attributed to the lattice misfit-induced imperfection in epitaxy layers. This result coincides with the experimental one.

关 键 词：分子束外延 光学材料 砷化镓 硒化锌 拉曼光谱 相干长度 薄膜生长 化合物半导体 

分 类 号：O433.1[机械工程—光学工程] O484.1[理学—光学]