内建电场对应变多量子阱带阶的影响  

The influence of built-electric on the band offsets of strained MQW

作　　者：许丽萍[1] 

机构地区：[1]华北工学院理学系,山西太原030051

出　　处：《微纳电子技术》2003年第7期19-21,共3页Micronanoelectronic Technology

基　　金：山西省自然科学基金项目资助;山西省归国留学人员基金资助项目;总装基金办基金资助项目

摘　　要：隧穿电流的大小依赖于带阶的大小。内建电场会改变多量子阱的结构 ,使其由方阱变为斜阱 ,导致其带阶发生改变。本文定量地给出了由内建电场导致的价带阶变化及其斜率。对沿任意方向生长的立方超晶格系统 ,当其特征厚度小于临界值 (欠临界系统 )时 ,给出了内建电场与应变的定量关系。针对不同的量子阱系统 ,当生长方向沿着 [111]方向时 ,计算了三种类型、2 1种组分、由内建电场引起的价带阶变化量。所有结果在线性领域及没有相变的情况下都是适用的。Tunneling currents depend on the band offsets. The potential profiles of MQW will be changed due to built in electric fields, from square wells into sloped wells, which lead to the increments of band offsets. The dependence of the band offsets and slopes of the wells on the built in electric fields have been given quantitatively. For cubic systems grown in arbitrary direction (undercritical cases), the function relationships between built in electric fields and strains ware given. The increments of band offsets in three types (21cases) have been calculated, which result from built in electric fields and the grown direction [111]. All the results are valid in linear region and no phase transitions occur.

关 键 词：内建电场 应变 多量子阱 带阶 隧穿电流 

分 类 号：O472.4[理学—半导体物理] TN304.2[理学—物理]