双膜桥微波MEMS开关  

Two membrane microwave MEMS switches

作　　者：朱健[1] 郁元卫[2] 陆乐[2] 贾世星[2] 张龙[2] 

机构地区：[1]东南大学仪器科学与工程系,江苏南京210096 [2]南京电子器件研究所,江苏南京210016

出　　处：《微纳电子技术》2003年第7期382-384,共3页Micronanoelectronic Technology

摘　　要：介绍了一种双膜桥微波MEMS开关 ,给出了开关的设计与优化方法 ,建立了开关的仿真模型 ,使用硅表面微机械工艺制造了双膜桥开关样品 ,其主要结构为硅衬底上制作CPW金属传输线电极和介质层 ,然后制作具有微电感结构的金属膜桥 ,提高了开关隔离度。利用HFSS软件仿真的结果表明 ,该开关在微波低频段 (3～ 6GHz)有着很好的隔离性能。研制的开关样品在片测试的电性能指标为 :插损小于 0 .3dB ,隔离度大于 4 0dB ,驱动电压小于 2 4V。The design, optimization and simulation model for microwave MEMS membrane switches with two bridge, which is based on surface micromachining fabrication are presented. The major processes consist of fabricating CPW transmission lines and dielectric layer on silicon substrate, then fabricating inductively metal bridge. The approach is to design a high isolation MEMS switch with dual inductively tuned bridge membranes. The result simulated by HFSS demonstrates that it provides high isolation performance at 3～6GHz. On wafer measurement results are as follows: insertion loss 0.3dB, isolation 40dB and the applied voltage 24V.

关 键 词：双膜桥微波MEMS开关 微机电系统 射频开关 高隔离度 微电感结构 开关隔离度 

分 类 号：TM564[电气工程—电器]