基于砷化镓衬底的RF MEMS膜开关  

RF MEMS membrane switches on GaAs substrates

作　　者：郑惟彬[1] 黄庆安[1] 李拂晓[2] 廖小平[1] 

机构地区：[1]MEMS教育部重点实验室,东南大学江苏南京210096 [2]南京电子器件研究所,江苏南京210016

出　　处：《微纳电子技术》2003年第7期395-396,403,共3页Micronanoelectronic Technology

摘　　要：射频微机械开关由于其优越的高频特性在微波和毫米波电路中表现出巨大的应用前景。但是目前的微机械开关都是制作在硅基衬底上的 ,难于与后面的高频砷化镓处理电路相集成。本文介绍了基于砷化镓衬底的RFMEMS膜开关 ,着重介绍了开关的工作原理。RF MEMS switches have been demonstrated to be of great potential in microwave and millimeter wave circuits for their superior high frequency performances. But most of switches that have been fabricated are on Si substrates. To integrate with the high frequency GaAs signal processing circuits, it is necessary to research the MEMS switch on GaAs substrates. In this paper, the MEMS membrane switches are described. Their operation mechanics, fabrication and measuring results are mainly presented.

关 键 词：射频微机械开关 砷化镓 微机电系统 工作原理 MEMS膜开关 

分 类 号：TM564[电气工程—电器]