ICP硅深槽刻蚀中的线宽控制问题研究  

Research of critical dimension loss control in the ICP etch of deep Silicon trenches

作　　者：王成伟[1] 闫桂珍[1] 朱泳[1] 

机构地区：[1]北京大学微电子学研究院,北京100871

出　　处：《微纳电子技术》2003年第7期104-107,共4页Micronanoelectronic Technology

摘　　要：在高密度反应离子刻蚀技术中 ,存在明显的线宽损失 ,对小尺寸MEMS结构影响很大 ,将使MEMS器件灵敏度下降 ,稳定性降低。本文介绍了一种减小线宽损失的新工艺技术 ,在初始阶段的刻蚀步骤中加入剂量逐渐递减的钝化气体C4 F8,同时适当减小循环周期的刻蚀时间 ,使线宽损失由原来常规刻蚀工艺中的 15 5nm减少到 5 5nm。此项技术已经应用于MEMS陀螺的制造工艺中 。There is obvious critical dimension (CD) loss in the high density RIE technology, which decreases the sensibility and stability of MEMS devices, especially for the small dimension MEMS structures. This paper introduces a new technology that can decrease the CD loss, which decreases from the 155nm in the normal etch process to 55nm by adding passivation gas C 4F 8, whose dose is gradually descending in the first several etch steps and decreasing the etch time in the switch periods. This technology has been used in the manufacture of MEMS gyroscopes and gains good results.

关 键 词：ICP 硅深槽刻蚀 线宽控制 离子刻蚀 MEMS结构 微机电系统 

分 类 号：TN305.7[电子电信—物理电子学]