多台阶介质槽隔离的SiCOI MESFET器件  

A SiCOI MESFET with Multi-Step Dielectric Groove Isolation

作　　者：龚欣[1] 张进城[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子所,西安710071

出　　处：《Journal of Semiconductors》2004年第1期73-76,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目 ( No.2 0 0 2 CB3 1190 4)~~

摘　　要：用二维器件仿真软件 MEDICI对 Si COI(Si C on insulator) MESFET的击穿特性进行了研究 ,提出了一种新的 Si COI MESFET器件介质槽隔离结构 ,即多台阶介质槽隔离结构 .研究结果表明 ,与单介质槽隔离 Si COI MES-FET相比 ,多台阶结构在保持高击穿电压的情况下 ,可以大大提高器件的饱和漏电流和跨导 .多台阶介质槽隔离Si COIBreakdown characteristic of SiCOI (SiC on insulator) MESFET is studied using two-dimensional device simulator,MEDICI.A new type of device structure,SiCOI MESFET with multi-step dielectric groove isolation,is presented.Simulation results show that compared with the single dielectric groove structure,saturated drain current and transconductance of the new structure are significantly improved and high breakdown voltage is remained.SiCOI MESFET with multi-step dielectric groove isolation is a structure for power devices with both high breakdown voltage and large drain current.

关 键 词：SICOI MESFET 多台阶介质槽隔离 击穿电压 

分 类 号：TN386.3[电子电信—物理电子学]