射频功率对反应磁控溅射法沉积的a-C:F薄膜的影响  

Influence of RF input power on a-C:F films prepared by reactive magnetron sputtering

作　　者：江美福[1] 宁兆元[1] 

机构地区：[1]苏州大学物理科学与技术学院,江苏苏州215006

出　　处：《苏州大学学报（自然科学版）》2003年第4期51-56,共6页Journal of Soochow University(Natural Science Edition)

基　　金：国家自然科学基金资助项目:(10175048)

摘　　要：以高纯石墨作靶、CHF3/Ar作源气体,采用反应磁控溅射沉积法制备了具有低介电常数(k～2.18)的氟化非晶碳(a C:F)薄膜.薄膜的结构和性质由红外吸收光谱、紫外可见光光谱、沉积速率及介电常数等作了表征.有关数据显示,薄膜的沉积速率随着射粒输入功率的增大而上升.所沉积的a C:F薄膜中存在着一定比例的苯环结构.改变射频功率可以改变薄膜中的F/C比值,调制薄膜中环式结构与链式结构的比例,从而影响薄膜的介电常数和光学带隙等性能.The aC:F films with low dielectric constant (k2.18) were prepared by reactive magnetron sputtering with CHF3/Ar as source gases and pure graphite as a target. The bonding configurations and optical properties have been examined by Fourier transform infrared radiation,ultravioletvisible transmission spectroscopy,deposition rate and dielectric constant.It is showed that the deposition rate of the films increases with the increasing of RF input power,and the aC:F films consist of some benzene rings configuration.The F/C atomic ratio and the ratio of rings and chains configuration in the films can be modulated by changing RF input power,which has a great influence on the properties of the aC:F films,such as dielectric constant and optical band gaps.

关 键 词：氟化非晶碳薄膜 a-C:F薄膜 反应磁控溅射沉积法 射频功率 介电常数 薄膜结构 沉积速率 

分 类 号：O484.1[理学—固体物理]