金属诱导非晶硅(横向)结晶的扩散诱导模型  

The Diffusion Model of Metal Induced(Lateral)Crystal lization

作　　者：邱春文[1] 罗以琳[1] 

机构地区：[1]汕头大学物理系,汕头515063

出　　处：《汕头大学学报（自然科学版）》2004年第1期46-49,54,共5页Journal of Shantou University：Natural Science Edition

摘　　要：为了能定性定量解释金属诱导非晶硅薄膜结晶实验中所遇到的一系列现象 ,提出一套扩散诱导结晶模型 。A diffusion model is presented in this paper to exp la in the phenomena of metal induced(lateral)crystallization qualitatively as well as quantitatively.It successfully explains these phenomena and thus thi s theoretical model is considered to be useful for the research in the preparati on of polycrystalline silicon films by metal induced crystallization at low temp eratures.

关 键 词：金属诱导结晶 非晶硅薄膜 扩散诱导模型 半导体 横向结晶 

分 类 号：TN304.12[电子电信—物理电子学]