掺锗CZ硅单晶中锗分布形式的研究  

Study on Distribution Form of Ge in CZSiGe Crystal

作　　者：牛新环[1] 张维连[1] 吕海涛[1] 蒋中伟[1] 

机构地区：[1]河北工业大学半导体材料研究所,天津300130

出　　处：《河北工业大学学报》2004年第1期1-5,共5页Journal of Hebei University of Technology

基　　金：国家自然科学基金资助项目 (59772037);河北省自然科学基金资助项目 (500016)

摘　　要：利用扫描电镜能谱分析法,对CZ法生长的掺锗浓度不同的硅锗单晶中锗浓度进行了测定,结果发现硅中锗的纵向分布是头部浓度较低,尾部锗浓度较高.根据测定的浓度计算出了该工艺条件下硅锗体单晶中锗的有效分凝系数为Ke ≈ 0.60～0.65.The distribution of impurity Ge in SiGe bulk single crystal which was grown by varying speed CZ was measured by using the SEM-EDS methods, and it was found that the Ge concentration varied from a lower value at head to a highter one at the tail of Si crystal which was doped Ge. According to the data which was measured the ef- fective distribution coefficient Ke value calculated is 0.60~0.65 approximately by this technique.

关 键 词：直拉法 硅锗单晶 杂质分布 分凝系数 晶体生长 

分 类 号：TN304.2[电子电信—物理电子学]