用x射线形貌研究半绝缘砷化镓单晶胞状结构  

Study on the cell structure in semi-insulation gallium arsenide

作　　者：徐岳生[1] 唐蕾[1] 王海云[1] 刘彩池[1] 郝景臣[2] 

机构地区：[1]河北工业大学材料学院信息功能材料研究所,天津300130 [2]中国信息产业部1413所,石家庄050051

出　　处：《物理学报》2004年第2期651-655,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :5 9972 0 0 7);中国人民解放军总装备部 (批准号 :0 0J5 0 2;2 .1.QT45 0 1);科技部攀登计划 (批准号 :2 0 0 0J5 0 4);河北省自然科学基金 (批准号 :5 990 3 3 )资助的课题~~

摘　　要：通过x射线异常透射形貌 (XRT) ,化学腐蚀显微观察和电子显微技术 (TEM)研究了液封直拉 (LEC)法生长的半绝缘砷化镓 (SI GaAs)单晶中蜂窝状胞状结构 ,从晶体生长和冷却过程的热应力、弹性形变引起位错的运动和反应考虑 ,分析了该结构的形成机理与过程 .认为这是由高密度位错 (EPD)Defects constructing a netlike cell structure in the 3-inch semi-insulating gallium arsenide (SI-GaAs) single crystal were studied by methods of chemical etching, x-ray anomalous transmission topography (XRT) and transmission electron microscope (TEM). The nature and the formation mechanism of these structures were analyzed. It is assumed that the cell structures are made by the clusters of small angle grain boundary caused by the movement and interaction of high density of dislocations. and the cell wall is the typical small angle grain boundary. The phase difference among the small angle grain boundaries increases with the density of dislocations.

关 键 词：胞状结构 小角度晶界 电子显微技术 砷化镓晶体 半导体材料 X射线衍射分析 液封直拉法 半绝缘砷化镓 位错 

分 类 号：O721[理学—晶体学]