薄膜的自组织设计及形貌控制(英文)  

Self-organized ZnO Thin Film Design and Morphology Control

作　　者：周小燕[1] 邓宏[1] 姜斌[1] 李燕[1] 王恩信[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《发光学报》2004年第1期9-13,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金资助项目 ( 60 3 90 0 73 )~~

摘　　要：采用单源化学气相沉积 (SSCVD)法 ,在Si( 1 0 0 )基片上通过改变前驱反应体与基片的入射角度 ,获得了可控柱状取向的ZnO薄膜。研究发现 ,入射角度的改变可使沉积薄膜中的柱状结构的生成方向倾斜。但X射线衍射 (XRD)分析表明 :ZnO薄膜的c轴 ( 0 0 2 )取向与入射角无关 ,且不沿ZnO柱状结构的生长方向取向。由于ZnO的 ( 0 0 2 )面为其表面自由能最低且原子密度高的晶面 ,ZnO薄膜的生长更易于在垂直于基片表面的方向c轴取向生长。The columnar structure of ZnO thin films with respect to the deposition angle prepared by single source chemical vapor deposition (SSCVD) on Si(100) substrate was examined. Growth was performed using a volatile precursor. It was found that the columnar structure depended on the angle between substrates and vapor sources during deposition. However, the XRD spectra indicated that the [002] crystallographic orientations of ZnO thin films were perpendicular to the substrate planes, irrespective of deposition angle and not aligned with columnar growth orientations as may be expected. The c-axis orientation of SSCVD ZnO thin films is easily aligned with the surface of substrate because of its surface anisotropy and the optimal growth is on its high-density face (002) with the lowest face free energy.

关 键 词：氧化锌薄膜 自组织设计 单源化学气相沉积法 柱状结构 入射角度 X射线衍射分析 C轴取向 

分 类 号：O484.1[理学—固体物理]