含金刚石的复相过渡层及Al_2O_3衬底上金刚石薄膜的附着力  

DEPOSITION OF A NEW KIND OF COMPOSITE INTERLAYER CONTAINING DIAMOND PHASE AND ITS APPLICATION IN ENHANCING ADHESION OF DIAMOND COATINGS ON ALUMINA SUBSTRATES

作　　者：赵中琴[1] 唐伟忠[1] 苗晋琦[1] 吕反修[1] 李成明[1] 陈广超[1] 杨志威[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《金刚石与磨料磨具工程》2004年第1期37-40,共4页Diamond & Abrasives Engineering

摘　　要：采用微波等离子体化学气相沉积的方法,以H_2和八甲基环四硅氧烷(D_4)为原料,在H_2(Ⅱ):H_2(Ⅰ,为带动D_4的载气)的流量比23:1,P=5332.88Pa,Ts=850℃左右的工艺条件下,制备了含有金刚石及一定量SiO_2和SiC的复相薄膜。初步的实验结果表明,金刚石相可在该复相薄膜上继续生长,进而形成高质量的金刚石薄膜。同时,与在Al_2O_3衬底上直接沉积的金刚石涂层相比,采用上述复相薄膜作为过渡层可明显地提高金刚石涂层对于Al_2O_3陶瓷衬底的附着力。Composite films containing diamond, SiO2 and SiC phases were deposited from H2 and octamethylcyclotetrasiloxane ( D4 ) gases by using microwave plasma chemical vapor deposition (MPCVD) technique. The technological condition is: ratio of H2 (Ⅱ): H2 ( I , the carrier gas of D4 ) = 23:1, P= 5332.88Pa, Ts = 850℃. Preliminary results indicated that diamond grains would continue to grow from such composite films and high quality diamond coatings could thus be produced. In addition, the adhesion of diamond coatings on Al2O3 substrates could be greatly enhanced, when the composite films were used as bonding interlayer, compared with that of diamond coatings deposited directly on Al2O3 substrates.

关 键 词：微波等离子体化学气相沉积 金刚石薄膜 复相薄膜 过渡层 MPCVD 

分 类 号：TG7[金属学及工艺—刀具与模具] TQ163[化学工程—高温制品工业]