HgCdTe红外探测器离子注入剂量优化研究  

Optimizing boron implantation dose of HgCdTe infrared detectors

作　　者：陈贵宾[1] 陆卫[1] 蔡炜颖[1] 李志锋[1] 陈效双[1] 胡晓宁[1] 何力[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室

出　　处：《物理学报》2004年第3期911-914,共4页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :10 0 740 68和 60 2 44 0 0 2 );国家重点基础研究项目 (批准号 :G19980 614 0 4)资助的课题~~

摘　　要：在中波响应波段的p型Hg0 70 9Cd0 2 91 Te(MCT)分子束外延生长薄膜上 ,利用材料芯片技术获得叠加注入不同硼离子剂量的系列大光敏元面积 (5 0 0 μm× 5 0 0 μm)的n_op_p结 .通过测量液氮温度下不同离子注入剂量单元的电流 电压特性和对零偏微分电阻R0 分析 ,观测到p_n结的性能与硼离子注入剂量明显的依赖关系 .在另一片薄膜材料(镉组分值为 0 2 74 3)上通过该方法获得R0Using the material chip technology,large area photodiodes of n-on-p structure with different boron implantation dose are fabricated on the Hg 1-xCd xTe film for mid-infrared wavelength region(x=0.291).Current-voltage characteristics of the photodiodes are measured at 77K and zero bias resistance-area products of different photodiodes are fitted from the data in the voltage range of -0.2—0.08V.The study indicated that the R 0A products of different elements depended distinctly upon the implanted boron dose.A large R 0 value has also obtained in another chip with x=0.2743.All the samples in this study are grown by Riber 32P molecular-beam epitaxy system and all the junctions-forming process is same to the standard planar technology but using a series of metallic masks during the boron ion implantation.

关 键 词：碲镉汞薄膜 红外探测器 离子注入 分子束外延 P-N结 暗电流特性 

分 类 号：TH74[机械工程—光学工程]