GaN表面极性的光电子衍射研究  

Photoelectron diffraction study on the polarity of GaN surface

作　　者：徐彭寿[1] 邓锐[1] 潘海斌[1] 徐法强[1] 谢长坤[1] 李拥华[1] 刘凤琴[2] 易布拉欣.奎热西 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029 [2]中国科学院高能物理研究所同步辐射中心,北京100039

出　　处：《物理学报》2004年第4期1171-1176,共6页Acta Physica Sinica

基　　金：国科学院知识创新工程资助的课题~~

摘　　要：利用x射线光电子衍射的极角扫描模式 ,采集了GaN(0 0 0 1)表面由 (10 10 )和 (112 0 )晶面产生的光电子衍射实验曲线 ,并运用光电子衍射的前向聚焦效应确定了GaN(0 0 0 1)表面是Ga在最外层的极性面 .利用与能量有关的光电子衍射即角分辨光电发射精细结构谱技术并结合多重散射团簇模型计算对GaN(0 0 0 1)表面的极化性质进行了研究 。We have obtained the photoelectron diffraction curves from (1010) and (1120) crystal planes on GaN(0001) surface by using a polar scan mode of x_ray p hotoelectron diffraction (XPD). On the basis of principle of “forward focusing' of XPD, we have determi n ed that its polarity is Ga termination. The polarity of GaN(0001) surface is als o studied by using energy dependence photoelectron diffraction called angle_res o lved photoemission extended fine structure, as well as the calculation o f multiple scattering cluster models, which confirmed that its polarity is Ga te rmination.

关 键 词：氮化镓 表面极性 光电子衍射 半导体材料 宽带隙材料 光电子衍射 

分 类 号：O472[理学—半导体物理]