不同波段近紫外光在SU-8胶中穿透深度的研究  

Research of Penetration Length of Near Ultraviolet in SU-8 Layers

作　　者：李雄[1] 徐智谋[1] 易新建[1] 何少伟[1] 刘胜[1] 连昆 

机构地区：[1]华中科技大学光电子工程系 [2]Louisiana State University

出　　处：《微细加工技术》2004年第1期38-40,46,共4页Microfabrication Technology

摘　　要：通过对SU 8胶近紫外波段下透射光谱的分析,得到不同波长近紫外光在SU 8胶中的穿透深度,并分析了不同波段近紫外光对SU 8胶微结构的影响,结果表明穿透深度大的近紫外波段曝光出来的图形质量好,深宽比大,侧壁陡直。The transmission spectrum of the SU-8 photoresist in the near UV is analyzed to get the penetration length of the different wavelengths UV in SU-8.The effect on the SU-8 microstructure for the different wavelengths UV is also analyzed.The results show that the pattern exposured by the near UV band of deep penetration has good quality,high aspect ratio and steep sidewall.

关 键 词：紫外光 SU-8胶 穿透深度 MEMS UV-UGA 透射光谱 光刻胶 

分 类 号：TN305.7[电子电信—物理电子学]