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作 者:吕反修[1] 高旭辉[1] 郭会斌[1] 陈广超[1] 李成明[1] 唐伟忠[1] 佟玉梅[1] 余怀之[2] 程宏范[2] 杨海[2]
机构地区:[1]北京科技大学材料学院,北京100083 [2]北京有色金属研究总院,北京100088
出 处:《人工晶体学报》2004年第1期105-108,共4页Journal of Synthetic Crystals
摘 要:本文采用真空电子束蒸镀技术在多谱段ZnS衬底上沉积了适合金刚石膜沉积的致密陶瓷过渡层,并利用微波等离子体CVD金刚石膜低温沉积技术进行了金刚石膜沉积研究。发现在陶瓷过渡层上的金刚石形核极其困难,其原因可能是陶瓷涂层在沉积过程中龟裂导致ZnS蒸汽扩散逸出干扰金刚石形核所致。本文采用诱导形核技术在过渡层/ZnS试样表面观察到极高密度(1010/cm2)的金刚石形核,并对金刚石/过渡层/ZnS试样的红外透过特性进行了评价。In the present investigation, a ceramic interlayer suitable for diamond film deposition on multi-spectra ZnS substrate was prepared by electron beam evaporation. Diamond film deposition was conducted using microwave plasma CVD method and the low temperature deposition technique. It is found that diamond nucleation on the ceramic interlayer is extremely difficult. The possible reason is probably the chapping of the ceramic interlayer during the process of diamond deposition, through which ZnS vapor might escape from the surface of the interlayer and so suppress the diamond nucleation. However, high density diamond nucleation (10^(10)/cm^2) was obtained by an induced nucleation technique. IR transmission of the diamond/interlayer/ZnS sample was also presented.
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