富磷熔体中生长的φ100 mm掺硫InP单晶研究  

Study on φ100 mm S-doped InP Single Crystal Grown from P-rich Melt

作　　者：周晓龙[1] 安娜[2] 孙聂枫[1] 徐永强[1] 杨光耀[1] 谢德良[1] 刘二海[1] 李光平[3] 周智慧[3] 董彦辉[3] 孙同年[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]电子科技大学微电子与固体电子学院三系,成都610054 [3]中国电子科技集团公司第四十六研究所,天津300192

出　　处：《固体电子学研究与进展》2004年第1期134-137,共4页Research & Progress of SSE

基　　金：国家自然科学基金资助项目 (批准号 :60 2 760 0 8)

摘　　要：采用原位磷注入合成法在高压单晶炉内合成富磷的磷化铟 (In P)熔体 ,并利用液封直拉法 (LEC)生长出了 1 0 0 mm In P掺硫单晶材料。对富磷单晶分别用快速扫描光荧光谱技术、腐蚀金相法和扫描电镜进行了研究。结果表明在富磷量足够大的情况下 ,晶片上会出现孔洞 ,并对孔洞周围位错的形成原因及分布进行了分析。 1 0 0 mm In P单晶的平均位错密度也没有明显的增加 ,为今后生长更大尺寸的完整 InP-rich InP melt has been synthesised by phosphorus in-situ injection method, and 100 mm S-doped InP single crystal ingot has been grown from the melt by LEC method. The wafer cut from the ingot is studied by rapid PL mapping, E.P.D.(Etch-pit density) measurement and SEM method respectively. It is found that there are many hollow on the wafer when the melt is P-riched. The cause and distribution of the dislocation around these hollow are also investigated. The E.P.D. of the φ100 mm InP single crystal doesn’t increase markedly. It will establish the foundation for the further growth of larger perfect InP single crystals.

关 键 词：磷化铟 掺硫单晶材料 位错密度 原位磷注入合成法 富磷熔体 

分 类 号：TN304.2[电子电信—物理电子学]