MgZnO薄膜及其量子阱和超晶格的发光特性  

Luminescence Characteristic of MgZnO Films and Multiquantum Wells and Superlattices

作　　者：张德恒[1] 张锡健[1] 王卿璞[1] 孙征[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100

出　　处：《发光学报》2004年第2期111-116,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60076006);教育部博士点基金(2000042204)

摘　　要：MgO和ZnO形成合金Mg_xZn_(1-x)O的带隙可以在3.3～7.9eV之间变化,在制备紫外波段光电器件方面有着广阔的应用前景。由ZnO和MgZnO交替沉积而成的ZnO/Mg_xZn_(1-x)O量子阱和超晶格在激光器、光探测器和其他光电器件方面也有潜在的应用价值。回顾最近几年对MgZnO薄膜材料发光特性的研究进展,介绍在不同衬底上用不同方法制备MgZnO合金薄膜的制备技术、发光特性以及发光特性与薄膜中Mg含量的关系;综述近年来在ZnO/Mg_xZn_(1-x)O超晶格、量子阱研究上的成果,特别介绍了ZnO/Mg_xZn_(1-x)O对超晶格、量子阱的发光特性、发光机理以及发光特性与势垒层镁含量、器件温度的关系。The band gap of the MgZnO alloy composed of MgO and ZnO can be changed in the range from 3.3 ～ 7.9 eV. This material has potential applications in short wavelength opto-electronic devices. ZnO/Mg_xZn_(1-x)O quantum wells and superlattices can be used in the semiconductor lasers, photodetectors and other opto-electronic devises. In the present paper the developments of the investigation on luminescence characteristic for MgZnO thin films are reviewed. The preparation techniques, luminescence characteristic and corresponding physical mechanisms for the MgZnO alloys are introduced. The ZnO/MgZnO superlattices and quantum wells fabricated on different sub- strates are described. The Mg content and temperature dependence of the luminescence characteristic are discussed.

关 键 词：氧锌镁薄膜 量子阱 超晶格 光致发光 受激发射 半导体材料 

分 类 号：O472.3[理学—半导体物理]