基底温度对氮化硼薄膜场发射特性的影响  

Influence of substrates temperature on field emission characteristics of BN thin films

作　　者：孙文斗[1] 顾广瑞[1] 孙龙[1] 李全军[1] 李哲奎[1] 盖同祥[1] 赵永年[2] 

机构地区：[1]延边大学理工学院物理系 [2]吉林大学超硬材料国家重点实验室,长春130012

出　　处：《吉林大学学报（理学版）》2004年第2期251-254,共4页Journal of Jilin University:Science Edition

基　　金：国家自然科学基金(批准号:59831040).

摘　　要：利用射频磁控溅射方法,真空室中充入高纯N2(99.99%)和高纯Ar(99.99%)的混合气体,在n型(100)Si基底上沉积了六角氮化硼(h-BN)薄膜.在超高真空(<10-7Pa)系统中测量了BN薄膜的场发射特性,发现沉积时基底温度对BN薄膜的场发射特性有很大影响.基底温度为500℃时沉积的BN薄膜样品场发射特性要好于其他薄膜,阈值电场为12V/μm,电场升到34V/μm,场发射电流为280μA/cm2.所有样品的Fowler-Nordheim(F-N)曲线均近似为直线,表明电子是通过隧道效应穿透BN薄膜发射到真空的.H-BN thin films were prepared on the (100)-oriented surface of n-Si by r.f. sputtering physical vapor deposition(PVD). The field emission characteristics of the BN films were measured in a ultra high vacuum system. It has been found that the field emission characteristics of BN films is affected evidently by substrates temperature. A turn-on electric field as low as 12 V/μm is obtained and the highest emission current density is 280 μA/cm^2 for the BN film deposited at a substrate temperature of 500 ℃. The Fowler-Nordheim(F-N) curves are all nearly straight lines that indicate the electrons are emitted from n-Si to penetrate the BN films to vacuum tunneling by means of tunneling effect.

关 键 词：场发射 基底温度 表面粗糙度 氮化硼薄膜 射频磁控溅射 隧道效应 

分 类 号：TN304.23[电子电信—物理电子学] TN873.95