0.25μm GaAs基MHEMT器件  

0.25μm GaAs-Based MHEMT Device

作　　者：石华芬[1] 刘训春[1] 张海英[1] 石瑞英[1] 王润梅[1] 汪宁[1] 罗明雄[1] 

机构地区：[1]中国科学院微电子中心

出　　处：《Journal of Semiconductors》2004年第3期325-328,共4页半导体学报（英文版）

摘　　要：采用普通接触曝光研制成栅长为 0 .2 5 μm的 Ga As基 In Al As/ In Ga As变组分高电子迁移率晶体管(MHEMT) ,测得其跨导为 5 2 2 m S/ m m,沟道电流密度达 4 90 m A/ mm,截止频率为 75 GHz,比同样工艺条件下Ga As基 In Ga P/ In Ga As PHEMT的性能有很大的提高 .对该器件工艺及结果进行了分析 ,提取了器件的交流小信号等效电路模型参数 ,并提出了进一步得到高稳定性、高性能器件的方法 .m GaAs-based InAlAs/InGaAs MHEMT device fabricated in our laboratory is introduced.The extrinsic transconductance of the device is 522mS/mm while channel current density is 490mA/mm,and the calculated cutoff frequency is 75GHz.The device performances are better than the GaAs-based InGaP/InGaAs PHEMT,which is fabricated with the same processes.By the analysis of the results,the MHEMT small signal equivalent circuit model parameters are extracted.Finally,the methods to improve the characteristics of these devices are also described.

关 键 词：铟铝砷/铟镓砷 变组分高电子迁移率晶体管 赝配高电子迁移率晶体管 

分 类 号：TN386[电子电信—物理电子学]