a-SiTFT有源矩阵的单故障交流导纳分析  

Single Defect Analysis of AC Admittance on a-Si TFT Active Matrix

作　　者：宋跃[1] 邹雪城[2] 

机构地区：[1]湖南科技大学信息与电气工程学院,湘潭411201 [2]华中科技大学电子科学与技术系,武汉430074

出　　处：《仪器仪表学报》2004年第2期212-216,共5页Chinese Journal of Scientific Instrument

基　　金：国防基金资助项目 (99J2 .4.1.JW0 5 14 )

摘　　要：为检测 a- Si TFT有源矩阵板缺陷 ,提出了 TFT阵列测试电流环路模式和交流导纳单故障模型 ,研究了 TFT像素单元交流导纳特性和缺陷效应 ,研究发现 TFT单元在无缺陷时 ,它的等效电导、电容是测试信号频率和 TFT沟道电阻的函数 ,在出现任一单缺陷时 ,其等效电导或电容则为常数 ,同时发现在一定频率的测试信号作用下 ,无缺陷时 TFT通断态的等效电导、电容之差为非零常数 ,而在任一单缺陷时它们则依据缺陷类型可能出现 0或极大。本研究与实验取得了良好的吻合 ,从而为 a- Si TFT有源矩阵的故障检测提供了一种较完美的理论模型和实用的分析方法。A loop model testing defect of TFT array with current and single defect model of AC admittance were presented in order to test the defect on a-Si TFT active matrix panel, AC admittance properties and defect effect on TFT pixel unit were studied. The study found that when the TFT unit was of zero defect, the unit's equivalent conductance and capacitance varied with testing signal frequency and TFT drain resistor, when the unit was of any single defect they were constant. It has also been found by some testing signal with appropriate frequency that TFT's on-off differences of equivalent conductance and capacitance were all nonzero constant in zero defect, the differences were zero or very high in the light of defect type in any single defect. The study was good consistent with experiments, so a perfecter theory model and a practical analysis way to test defect on a-Si TFT active matrix were acquired.

关 键 词：缺陷模型 导纳特性 电流环路 归一化 缺陷效应 A-SITFT TFT-LCD 

分 类 号：TN873.93[电子电信—信息与通信工程]